feb.1999 mitsubishi transistor modules QM100CY-H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ups, cvcf QM100CY-H ? i c collector current ........................ 100a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 95 21.5 30 label tab#110, t=0.5 80 66 23 23 23.5 f 5.5 b 2 e 2 e 1 b 1 12 66 12 c 1 e 2 e 1 c 2 b 2 x b 1 x 48 62 m5 30 7 21 b 2 x c 2 b 1 x e 2 e 1 b 2 e 2 e 1 b 1 c 1
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m5 typical value ratings 600 600 600 7 100 100 620 6 1000 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =100a, i b =1.3a Ci c =100a (diode forward voltage) i c =100a, v ce =2v/5v v cc =300v, i c =100a, i b1 =Ci b2 =2a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 2.0 2.0 100 2.0 2.5 1.75 2.0 12 3.0 0.2 0.65 0.1 mitsubishi transistor modules QM100CY-H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 1 10 0 10 ? 10 ? 10 ? 10 ? 10 200 160 120 80 40 0 01 23 4 5 t j =25? i b =0.6a i b =0.2a i b =0.4a i b =1.0a i b =2.0a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1.0 3.0 2.6 2.2 1.8 1.4 t j =25? v ce =2.0v 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 444 t j =25? t j =125? v ce =5.0v v ce =2.0v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 23457 1 10 23457 2 10 t j =25? t j =125? i b =1.3a v be(sat) v ce(sat) 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 44 3 2 47 5 i c =100a i c =200a i c =50a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t on t j =25? t j =125? i b1 =? b2 =2a v cc =300v t f t s performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM100CY-H high power switching use insulated type
feb.1999 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 3 10 2 10 1 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 200 0 0 200 400 600 800 150 100 50 175 125 75 25 i b2 =?a 100 300 500 700 ?a t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 23457 0 10 23457 1 10 2 t s t f v cc =300v i b1 =2a i c =100a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 500? 1ms dc t w =50? 100? 10ms 7 5 3 2 7 5 3 2 7 5 3 2 0.20 0.16 0.12 0.04 0 7 5 3 2 1 10 0 10 0 10 444 42 0.08 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 2.0 1.6 1.2 0.8 0.4 t j =25? t j =125? 0 10 non?epetitive collector dissipation second breakdown area z th (jCc) ( c/ w) switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM100CY-H high power switching use insulated type
feb.1999 7 5 3 2 7 5 3 2 7 5 3 2 1.0 0.8 0.6 0.4 0.2 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 444 427 5 34 1 10 7 5 3 2 0 10 7 5 4 3 2 0 800 1000 2 10 4 400 200 600 7 5 4 3 2 7 5 4 3 2 ? 10 234 0 10 57 234 0 10 1 10 0 10 1 10 2 10 57 t rr i rr q rr t j =25? t j =125? v cc =300v i b1 =? b2 =2a 1 10 2 10 t rr ( m s) z th (jCc) ( c/ w) i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM100CY-H high power switching use insulated type
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